Power transistor startup Transphorm Inc. (Goleta, Calif.) has produced gallium-nitride on silicon components with a breakdown voltage of 600-V.
The company had previously announced a range of GaN power diodes. The company has added more diodes and power transistors to its range. The breakdown voltage of 600-V means that the improved power efficiency of GaN can be applied to applications that operate direct from mains electricity.
Transphorm is redefining electric power conversion, providing cost-competitive and easy-to-embed power conversion modules that reduce costly energy loss by up to 90 percent, and simplify the design and manufacturing of motor drives, power supplies and inverters for solar panels and electric vehicles. From material technology and device fabrication to circuit design and module assembly, Transphorm designs and delivers its power conversion devices and modules to meet the needs of global customers, helping them scale quickly and save money. By creating an ecosystem of electrical systems manufacturers powered by Transphorm, the company accelerates the adoption of application-specific power modules and paves the way for the next generation of electrical systems designed for optimal efficiency. To learn more about Transphorm, please visit www.transphormusa.com.