Long Beach, California
Dr. Wu presented how to achieve higher power output up to 4 kW by opeating the EZ-GaN transistors in parallel. The talk is included in the APEC conference proceedings.
We present a design example to multiply output power from high-voltage
GaN HEMTs in converter applications. A design process starting with a robust unit-cell
design, employing equal-length transmission-line gate drives and short drain
terminations successfully doubled and quadrupled output power with little efficiency
degradation. A 4-kW 220V:400V boost converter at 100-kHz was demonstrated using 4
GaN HEMTs achieving >99% efficiency from 15% to 90% load.
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